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To find the component your looking for, either search by part number or visit the relative department. Units off characteristics bvbrceo collectoremitter breakdown voltage i c 10ma, ib 0 30 v bvbrcbo collectorbase breakdown voltage i c 100a, ie 0 50 v bvbrebo emitterbase breakdown voltage i e 100a, ic 0. C collector power dissipation p c w 010264 8 0 120 100 80 60 40 20 ib2ma 1. Max unit vbrceo collectoremitter breakdown voltage ic100ma. Boca semiconductor corporation datasheet pdf catalog. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. The mjl21193 and mjl21194 utilize perforated emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Mjl21194 bipolar bjt transistor npn 250v 16a 4mhz 200w through hole to264 from on semiconductor. Mjl4281a npn mjl4302a pnp complementary npnpnp silicon.

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Features total harmonic distortion characterized high dc current gain. Silicon power transistors mj21193 npn mj21194 datasheet catalog. Mjl21194 silicon power transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic. Trans pwr npn 16a 250v to264 online from elcodis, view and download mjl21194 pdf datasheet, transistors bjt single specifications. Mj15004g on semiconductor datasheet and cad model download. Mjl21193 pnp, mjl21194 npn silicon power transistors the mjl21193.

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The mjl21193 and mjl21194 utilize perforated emitter technology and are. Selling mjl21193mjl21194, mjl21193g, mjl21194 with. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Compare pricing for on semiconductor mj21194g across 26 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Unit test conditions collector to base breakdown voltage vbrcbo 200 v ic100 a, i e0 collector to emitter breakdown voltage vbrceo 150 v ic1ma, i b0.

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